Transistors (Mosfet & IGBT)

Mitsubishi Electric offer besides their IGBT product ranges also the commercial mosfet series. Shindengen offer Mosfets mainly for the Lighting Industry and a selected range of mosfets for mainly the consumer market. Also they package the well known CoolMos products.

Mitsubishi Electric power modules contribute to increased efficiency and energy savings by condensing the power chip, required for motor control and power conversion, and the control circuits into one package and by applying inverter technology to all sorts of industrial equipment.

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage.

The chip trench gate structure, and the CSTBT™ (Mitsubishi Electric's unique IGBT that makes use of the carrier cumulative effect) has enabled low loss and smaller size for industrial equipment.

From the 5th generation IGBT, the lineup has included composite products*1 with a thin profile (NX type) in addition to the former external shape (standard type).

From the S series (6th generation IGBT), there has been additionally offered the T/T1 series (7th generation IGBT), with low power loss and smaller size.

MOSFET (Metal Oxide Semiconductor Field Effect Transistor) has a proven record of providing low current and low withstanding voltage in power devices that require high-speed switching, voltage driving and low loss. The use of a trench gate structure, enabled by submicron technology, radically reduces the low on-resistance (the resistance value in the region where the drain current flows between the drain and the source) compared to a planar structure.

Mitsubishi Electric succeeded in developing a SiC power device pursuing special characteristics .

SiC has approximately 10 times the critical breakdown strength of silicon. Furthermore, the drift layer that is a main cause of electrical resistance is one-tenth of the thickness. This allows a large reduction in electrical resistance and, in turn, reduces power loss. This SiC characteristic enables dramatic reductions in conductivity loss and switching loss in power devices.